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ISO 9001 CERTIFIED BY DSCC
M.S. KENNEDY CORP.
H-BRIDGE MOSFET POWER MODULE
3020
(315) 701-6751
4707 Dey Road Liverpool, N.Y. 13088
FEATURES:
* * * * * *
Pin Compatible with MPM3002 and MPM3012 P and N Channel MOSFETs for Ease of Drive N Channel Current Sensing MOSFET for Lossless Sensing Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity Avalanche Rated Devices 100 Volt, 10 Amp Full H-Bridge
DESCRIPTION:
The MSK 3020 is an H-bridge power circuit packaged in a space efficient isolated ceramic tab power SIP package. The MSK 3020 consists of P-Channel MOSFETs for the top transistors and N-Channel MOSFETs for the bottom transistors. The N Channel MOSFETS are current sensing to allow lossless current sensing for current controlled applications. The MSK 3020 uses M.S. Kennedy's proven power hybrid technology to bring a cost effective high performance circuit for use in today's sophisticated servo motor and disk drive systems. The MSK 3020 is pin compatible with the MPM3002 and MPM3012 with some differences in specifications.
EQUIVALENT SCHEMATIC
TYPICAL APPLICATIONS
* * * *
Stepper Motor Servo Control Disk Drive Head Control X-Y Table Control Az-El Antenna Control 1 2 3 4 5 6
PIN-OUT INFORMATION
Gate Q1 Source Q1 Drain 1, 2 Gate Q2 Sense Q2 Kelvin Source 2, 3 7 8 9 10 11 12 Source 2, 3 Sense Q3 Gate Q3 Drain 3, 4 Gate Q4 Source 4
1
Rev. A 7/00
ABSOLUTE MAXIMUM RATINGS
VDSS VDGDR VGS ID IDM RTH-JC Drain to Source Voltage ........... 100V MAX Drain to Gate Voltage (RGS = 1 MW ) ........................ 100V MAX Gate to Source Voltage (Continuous) ........................... 20V MAX Continuous Current .................... 10A MAX Pulsed Current ........................... 25A MAX Thermal Resistance (Junction to Case) ......................... 4.0C/W Sense Current - Continuous ...... 13 mA Single Pulse Avalanche Energy (Q1, Q4) ........................................................ 7.9 mJ (Q2, Q3) ......................................................... 69 mJ TJ Junction Temperature ............................ +175C MAX TST Storage Temperature ........................ -55C to + 1 5 0 C TC Case Operating Temperature Range .... -55C to + 1 2 5 C TLD Lead Temperature Range (10 Seconds) ........................................... 300C MAX
IM MAX IMM Sense Current Peak ................. 33 mA ELECTRICAL SPECIFICATIONS MAX Parameter
Drain-Source Breakdown Voltage Drain-Mirror Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate-Source Threshold Voltage Drain-Source on Resistance Drain-Source on Resistance Forward Transconductance 2 3 1
Test Conditions 4
VGS = 0 ID = 0.25 mA (All Transistors) VDS = 100V, (Q2, Q3) VGS = 0 VDS = 100V VGS = 0V, (Q2, Q3) VDS = -100V VGS = 0V, (Q1, Q4) VGS = 20V VDS = 0V (All Transistors) VDS = VGS ID = 250 A (Q2, Q3) VDS = VGS ID = 250 A (Q1, Q4) VGS = 10V ID = 8.4A (Q2, Q3) VGS = -10V ID = -8.4A (Q1, Q4) VGS = 10V ID = 8.4A (Q2, Q3) VGS = -10V ID = -8.4A (Q1, Q4) VDS = 50V ID = 8.4A (Q2, Q3) VDS = -50V ID = -8.4A (Q1, Q4) ID = 14A VDS = 80V VGS = 10V VDD = 50V ID = 14A RG = 12W RD = 3.5W VGS = 0V VDS = 25V f = 1 MHz VGS = 10V ID = 14A ID = -8.4A VDS = -80V VGS = -10V VDD = -50V ID = -8.4A RG = 9.1W RD = 6.2W VGS = 0V VDS = -25V f = 1 MHz IS = 14A VGS = 0V (Q2, Q3) IS = -14A VGS = 0V (Q1, Q4) IS = 14A di/dt = 100A/S (Q2, Q3) IS = -8.4A di/dt = 100A/S (Q1, Q4) IS = 14A di/dt = 100A/S (Q2, Q3) IS = -8.4A di/dt = 100A/S (Q1, Q4)
Min.
100 100 2.0 -2.0 4.7 3.2
MSK 3020 Typ. Max.
-
Units
V V A A nA V V W W W W S S nC nC nC nS nS nS nS pF pF pF pF r nC nC nC nS nS nS nS pF pF pF V V nS nS C nC
N-CHANNEL (Q2, Q3) Total Gate Charge 1 Gate-Source Charge 1 Gate-Drain Charge 1 Turn-On Delay Time 1 Rise Time 1 Turn-Off Delay Time 1 Fall Time 1 Input Capacitance 1 Output Capacitance 1 Reverse Transfer Capacitance 1 Output Capacitance of Sensing Cells 1 Current Sensing Ratio 1 P-CHANNEL (Q1, Q4) Total Gate Charge 1 Gate-Source Charge 1 Gate-Drain Charge 1 Turn-On Delay Time 1 Rise Time 1 Turn-Off Delay Time 1 Fall Time 1 Input Capacitance 1 Output Capacitance 1 Reverse Transfer Capacitance 1 BODY DIODE Forward on Voltage Reverse Recovery Time Reverse Recovery Charge 1 1 1
25 -25 100 4.0 -4.0 0.26 0.31 0.16 0.20 26 5.5 11 1540 58 8.3 32 310 71 1.2 970
1390 -
9.5 42 22 25 700 320 83 9 15 58 45 46 760 260 170 2.5 -1.6 150 47 0.85 650
NOTES:
1 This parameter is guaranteed by design but need not be tested. Typical parameters are representative of actual device performance but are for reference only. 2 Resistance as seen at package pins. 3 Resistance for die only; use for thermal calculations. 4 TA = 25C unless otherwise specified. Rev. A 7/00 2
APPLICATION NOTES
N-CHANNEL GATES (Q2, Q3): For driving the N-Channel gates, it is important to keep in mind that it is essentially like driving a capacitance to a sufficient voltage to get the channel fully on. Driving the gates to +15 volts with respect to their sources assures that the transistors are on. This will keep the dissipation down to a minimum level. How quickly the gate gets turned ON and OFF will determine the dissipation of the transistor while it is transitioning from OFF to ON and vice-versa. Turning the gate ON and OFF too slow will cause excessive dissipation, while turning it ON and OFF too fast will cause excessive switching noise in the system. It is important to have as low a driving impedance as practical for the size of the transistor. Many motor drive IC's have sufficient gate drive capability for the MSK 3020. If not, paralleled CMOS standard gates will usually be sufficient. A series resistor in the gate circuit slows it down, but also suppresses any ringing caused by stray iductances in the MOSFET circuit. The selection of the resistor is determined by how fast the MOSFET wants to be switched. See Figure 1 for circuit details.
FIGURE 1
P-CHANNEL GATES (Q1, Q4): Most everything applies to driving the P-Channel gates as the N-Channel gates. The only difference is that the P-Channel gate to source voltage needs to be negative. Most motor drive IC's are set up with an open collector or drain output for directly interfacing with the P-Channel gates. If not, an external common emitter switching transistor configuration (see Figure 2) will turn the P-Channel MOSFET on. All the other rules of MOSFET gate drive apply here. For high supply voltages, additional circuitry must be used to protect the P-Channel gate from excessive voltages.
FIGURE 2
BRIDGE DRIVE CONSIDERATIONS: It is important that the logic used to turn ON and OFF the various transistors allow sufficient "dead time" between a high side transistor and its low side transistor to make sure that at no time are they both ON. When they are, this is called "shoot-through" and it places a momentary short across the power supply. This overly stresses the transistors and causes excessive noise as well. See Figure 3.
FIGURE 3
This deadtime should allow for the turn on and turn off time of the transistors, especially when slowing them down with gate resistors. This situation will be present when switching motor direction, or when sophisticated timing schemes are Rev. A 7/00 3 used for servo systems such as locked antiphase PWM'ing for high bandwidth operation.
APPLICATION NOTES, CONT.
USING CURRENT SENSING MOSFETS: A MOSFET transistor is constructed of many individual MOSFET cells connected in parallel. They share the current total very evenly. If one of these cells are brought out to a pin, that cell will pass an accurate proportional amount of the total current. This current can be used as a low power sense of the whole current without passing that whole current through a sensing device like a resistor. This small current multiplied by the ratio specified on the data sheet equals the whole current. There are several methods of working with the sense function to obtain the actual current. 1. Virtual Earth Sensing
The disadvantage is amplifying a current swing of 10 amps in 100 nSec to produce a 5V output means the op amp has to slew 50V/Sec. This is beyond the capabilities of a lot of op amps. 2. Resistor Sensing
The disadvantage is RT voltage must be above the offset voltage of the op amp and RT must be much less than RDS(ON) of the sensing cell or temperature shifts will affect accuracy.
4 Rev. A 7/00
TYPICAL PERFORMANCE CURVES
5
Rev. A 7/00
MECHANICAL SPECIFICATIONS
TORQUE SPECIFICATION 3 TO 5 IN/LBS. TEFLON SCREWS OR WASHERS ARE RECOMMENDED. ALL DIMENSIONS ARE 0.010 INCHES UNLESS OTHERWISE SPECIFIED.
ORDERING INFORMATION
PART NUMBER MSK 3020 SCREENING LEVEL Industrial
4707 Dey Road, Liverpool, New York 13088 Phone (315) 701-6751 FAX (315) 701-6752 www.mskennedy.com
The information contained herein is believed to be accurate at the time of printing. MSK reserves the right to make changes to its products or specifications without notice, however, and assumes no liability for the use of its products.
M.S. Kennedy Corp.
6
Rev. A 7/00

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